Germanium Telluride is an interesting candidate material for spintronic devices. In a comprehensive study at BESSY II, a Helmholtz-RSF Joint Research Group has now revealed how the spin texture switches by ferroelectric polarization within individual nanodomains.
Germanium telluride (GeTe) is known as a ferrolectric Rashba semiconductor with a number of interesting properties. The crystals consist of nanodomains, whose ferrolectric polarization can be switched by external electric fields. Because of the so-called Rashba effect, this ferroelectricity can also be used to switch electron spins within each domain. Germanium telluride is therefore an interesting material for spintronic devices, which allow data processing with significantly less energy input.
Russian German Cooperation
Now a team from HZB and the Lomonosov Moscow State University, which has established a Helmholtz-RSF Joint Research Group, has provided comprehensive insights into this material at the nanoscale. The group is headed by physical chemist Dr. Lada Yashina (Lomonosov State University) and HZB physicist Dr. Jaime Sánchez-Barriga. “We have examined the material using a variety of state-of-the-art methods to not only determine its atomic structure, but also the internal correlation between its atomic and electronic structure at the nanoscale,” says Lada Yashina, who produced the high-quality crystalline samples in her laboratory.
Read more on the BESSY II website
Image: The Fermi surface of multidomain GeTe (111) bulk single crystal measured with high-resolution angle-resolved photoemission at BESSY II. © HZB