A group of scientists from the Academic Centre for Materials and Nanotechnology of the AGH University of Kraków, led by prof. dr. hab. Konrad Szaciłowski, with the help of specialists from the SOLARIS National Synchrotron Radiation Center, published the results of research on the unusual switching mechanism of memristors based on nickel complexes with dibenzotetraase annulenes. The work was published in the journal Advanced Electronic Materials published by Wiley.
The 21st century is undoubtedly marked by a revolution in the computerisation of humankind. The growing demand for computing computer power and Internet traffic results in an increasing electricity demand, which is also related to increasing carbon dioxide emissions by humans. However, some impassable limitations affect the further development of this technology, namely the heat wall and the memory wall. The heat wall is caused by transistor downscaling, which increases power density but leads to excessive heat production that cannot be efficiently dissipated from the chip. The memory wall is associated with long latency and high power consumption when transferring data between the memory and the CPU.
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Image: Schematics of the structure and operation of the tested memristor.