Control of magnetoresistance in spin valves

Molecules, due to their wide-ranging chemical functionalities that can be tailored on demand, are becoming increasingly attractive components for applications in materials science and solid-state physics. Remarkable progress has been made in the fields of molecular-based electronics and optoelectronics, with devices such as organic field-effect transistors and light emitting diodes. As for spintronics, a nascent field which aims to use the spin of the electron for information processing, molecules are proposed to be an efficient medium to host spin-polarized carriers, due to their weak spin relaxation mechanisms. While relatively long spin lifetimes are measured in molecular devices, the most promising route toward device functionalization is to use the chemical versatility of molecules to achieve a deterministic control and manipulation of the electron spin.

Spin-polarized hybrid states induced by the interaction of the first molecular monolayers on ferromagnetic substrates are expected to govern the spin polarization at the molecule–metal interface, leading to changes in the sign and magnitude of the magnetoresistance in spin-valve devices. The formation of spin-polarized hybrid states has been determined by spin-polarized spectroscopy methods and principle-proven in nanosized molecular junctions, but not yet verified and implemented in large area functional device architectures.

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Image: Magnetoresistance (top) and X-ray spectroscopy (bottom) measurements, evidencing the control of the magnetoresistance sign and amplitude by engineering spin valves with NaDyClq/NiFe and NaDyClq/Co interfaces, and their corresponding interfacial molecule-metal hybridization states.