A revolutionary and energy-efficient information technology encoding digital data in electron spin (spintronics) by combining semiconductors and ferromagnets is being developed worldwide. Merging of memory and logic computing of magnetic based storage devices and silicon-based logic transistors is expected to ultimately lead to new computing paradigms and novel spin-based multifunctional devices. The advantages of this new technology would be non-volatility, increased data processing speed, reduced electric power consumption. All of them are essential steps towards next generation quantum computers.
To create spin-based electronics with potential to revolutionize information technology, silicon, the predominant semiconductor, needs to be integrated with spin functionality. Although silicon is non-magnetic at equilibrium, spin polarized currents can be established in Si by a variety of approaches such as the use of polarized light, hot electrons spin injection, tunnel spin injection, Seebeck spin tunneling and dynamical spin pumping methods, as had been demonstrated recently. In general, spin polarized currents refer to the preferential alignment of the spin angular momentum of the electrons in a particular direction.
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Image: Figure 1: a) the optical generation of spin polarized superdiffusive currents across a ferromagnetic/semiconductor interface is illustrated. b) the principles of TR-MOKE experiment are illustrated together with a cross-section TEM image describing the quality of the Ni/Si interface.
