Modern microelectronics relies on semiconductors and their metal electrodes. High-performance device functionality demands high transistor density within a single chip, which soon will reach the physical limits of bulk materials. Alternatives have been found in atomically thin materials, e.g. graphene and its semiconductive inorganic relatives.
MoS2 (molybdenum disulphide) is the representative inorganic layered crystal with properties similar to those of graphene. To be useful in applications, it must be joined to the metallic electrodes to enable charge flow between the metals and semiconductive (M/S) counterparts. In a recent study, scientists from University of Oulu, Finland have demonstrated the success of joining MoS2 to Ni (nickel) particles by using gold (Au) nanoglue as a buffer material. Through in-house observations and the first-principles calculations, the semiconductor and metal can be bridged either by the crystallized gold nanoparticles, or by the newly formed MoS2-Au-Ni ternary alloy.
A metallic contact is formed, leading to enhanced electron mobility crossing the M/S interface.
Image: representation of gold nanoglue joining molybdenum disulphide and nickel.