Up to now the proposed modifications do not allow to introduce graphene to existing electronic devices.
Graphene is the most promising two dimensional material for nanoelectronic applications featuring the relativistic-like electronic spectrum. Contact of graphene with various materials and its functionalization allows to manipulate the electronic structure, e.g. to change the conductivity type and band gap creation. The latter is of great interest due to the requirements for graphene transistor realisation. Furthermore, graphene contact with heavy/magnetic metals results in the lifting of the spin degeneracy of the Dirac cone, opening the spintronics field for its applications. However, up to now the proposed modifications do not allow to introduce graphene to existing electronic devices.
Image: a) Sketch of the studied system, the Pb atoms presented by yellow spheres; b) ARPES image of graphene/Pb/Pt(111) in the region of K point, taken as a sum of two spectra with p-and s-polarization of light; c) schematic spin structure of the graphene states in the case of large “intrinsic” spin-orbit interaction d) ARPES mapping of the system in two orthogonal k-directions near the K point of graphene.