Observation of Magnetoelectric Coupling

Multiferroic materials with coexisting ferroelectric and ferromagnetic orders have attracted much attention due to the magnetoelectric (ME) coupling opening prospects for alternative multifunctional electronic devices.  Switching magnetization by applied electric rather than magnetic field or spin-polarized current requires much less energy, making multiferroics promising for memory and logic applications. Due to a limited number of single-phase multiferroic compounds operating at room temperature, composite multiferroics containing ferroelectric and ferromagnetic components have been considered as viable alternatives. Moreover, it was shown that composite multiferroic materials often have much larger magnetoelectric coupling effect compared to their single-phase counterparts.

The recently emerged class of polycrystalline doped HfO2-based ferroelectric thin films, which are compatible with the modern Si technology, is a promising ferroelectric component in composite multiferroic heterostructures and it is therefore crucial to explore the ME effect at the ferroelectric/ferromagnetic interface in the heterostructures comprising doped HfO2. In this respect, a strong charge-mediated magnetoelectric coupling at the interface between classical ferromagnetic metal – Ni and ferroelectric HfO2has been recently predicted by theoretical modelling.

Read more on the Elettra Website

Image: Schematic drawing of a single capacitor device structure used in operando XAS/XMCD and HAXPES/MCDAD measurements with EELS (Electron energy loss spectroscopy) map of Co, Ni and O. Polarization vs. voltage hysteresis loop at RT and LT (left) and  MOKE (right) of Au/Co/Ni/HZO/W sample are also shown in figure.

Credit: Elettra

Unexpected rise in ferroelectricity as material thins


Researchers working at the Advanced Light Source (ALS) showed that hafnium oxide surprisingly exhibits enhanced ferroelectricity (reversible electric polarization) as it gets thinner.


The work shifts the focus of ferroelectric studies from more complex, problematic compounds to a simpler class of materials and opens the door to novel ultrasmall, energy-efficient electronics.

Ferroelectric lower limit?

Distortions in the atomic geometries of certain materials can lead to ferroelectricity—the presence of electric dipoles (charge separations) with switchable polarizations. The ability to control this polarization with an external voltage offers great promise for ultralow-power microprocessors and nonvolatile memory.

As electronic devices become smaller, however, the materials used to store and manipulate electronic data are being pushed to low-dimensional extremes. Properties that function reliably in bulk materials often diminish in ultrathin films just a few atomic units thick. Therefore, exploring the critical thickness limit in “polar” materials (i.e., materials having spontaneous electric polarization) is not only a fundamental issue for nanoscale ferroelectric research, it also has extensive implications for the future of high-density ferroelectric-based electronics.

Read more on Advanced Light Source (ALS) website

Image : A thin layer of hafnium oxide (two unit-cell thicknesses, or about 1 nm) has an electric polarization that’s reversible by an external electric field, making it attractive for use in next-generation low-power microelectronics.

Credit: Ella Maru Studio