Leap toward more energy-efficient supercomputing

Researchers have revealed an adaptive response with a ferroelectric device, which responds to light pulses in a way that resembles the plasticity of neural networks. This behavior could find application in energy-efficient microelectronics.

“Today’s supercomputers and data centers demand many megawatts of power,” said Haidan Wen, a physicist at the U.S. Department of Energy (DOE) Argonne National Laboratory. ​“One challenge is to find materials for more energy-efficient microelectronics. A promising candidate is a ferroelectric material that can be used for artificial neural networks as a component in energy-efficient microelectronics.”

Ferroelectric materials can be found in different kinds of information processing devices, such as computer memory, transistors, sensors and actuators. Argonne researchers report surprising adaptive behavior in a ferroelectric material that can evolve step-by-step to a desired end, depending on the amount of photons from light pulses striking the material. Working alongside Argonne researchers were scientists from Rice University, Pennsylvania State University and DOE’s Lawrence Berkeley National Laboratory.

This team’s material is laden with networked islands or domains that are as distinct as oil in water. These domains are nanometers in size — billionths of a meter — and can rearrange themselves in response to light pulses. This adaptive behavior could be used in the energy-efficient movement of information in microelectronics.

The team’s ferroelectric sample is structured as a sandwich of alternating layers of lead and strontium titanate. Prepared by the Rice University collaborators, this seven-layer sandwich is 1,000 times thinner than a piece of paper. Previously, the team had shined a single, intense light pulse on a sample and created uniform, nanoscale ordered structures.

“Today’s supercomputers and data centers demand many megawatts of power. One challenge is to find materials for more energy-efficient microelectronics. A promising candidate is ferroelectric material that can be used for artificial neural  networks as a component in energy-efficient microelectronics.” — Haidan Wen, Argonne physicist

“This time, we hit the sample with many weak light pulses, each of which lasts a quadrillionth of a second,” Wen said. ​“As a result, a family of domain structures, rather than a single structure, was created and imaged, depending on the optical dosage.”

To visualize the nanoscale responses, the team called upon the Nanoprobe (beamline 26-ID) operated by the Center for Nanoscale Materials and the Advanced Photon Source (APS). Both are DOE Office of Science user facilities at Argonne. With the Nanoprobe, an X-ray beam tens of nanometers in diameter scanned the sample as it was exposed to a barrage of ultrafast light pulses. 

The resulting images revealed networked nanodomains being created, erased and reconfigured due to the light pulses. The regions and boundaries of these domains evolved and rearranged at lengths of 10 nanometers — about 10,000 times smaller than a human hair — to 10 micrometers, roughly the size of a cloud droplet. The final product depended on the number of light pulses used to stimulate the sample.

“By coupling an ultrafast laser to the Nanoprobe beamline, we can initiate and control changes to the networked nanodomains by means of light pulses without requiring much energy,” said Martin Holt, an X-ray and electron microscopy scientist and group leader.

Read more on APS website

Image: Artistic rendering representing light pulses yielding adaptive transformations in nanodomain structures applicable to neuromorphic computing.

Credit: Argonne National Laboratory/Haidan Wen.

Observation of Magnetoelectric Coupling

Multiferroic materials with coexisting ferroelectric and ferromagnetic orders have attracted much attention due to the magnetoelectric (ME) coupling opening prospects for alternative multifunctional electronic devices.  Switching magnetization by applied electric rather than magnetic field or spin-polarized current requires much less energy, making multiferroics promising for memory and logic applications. Due to a limited number of single-phase multiferroic compounds operating at room temperature, composite multiferroics containing ferroelectric and ferromagnetic components have been considered as viable alternatives. Moreover, it was shown that composite multiferroic materials often have much larger magnetoelectric coupling effect compared to their single-phase counterparts.

The recently emerged class of polycrystalline doped HfO2-based ferroelectric thin films, which are compatible with the modern Si technology, is a promising ferroelectric component in composite multiferroic heterostructures and it is therefore crucial to explore the ME effect at the ferroelectric/ferromagnetic interface in the heterostructures comprising doped HfO2. In this respect, a strong charge-mediated magnetoelectric coupling at the interface between classical ferromagnetic metal – Ni and ferroelectric HfO2has been recently predicted by theoretical modelling.

Read more on the Elettra Website

Image: Schematic drawing of a single capacitor device structure used in operando XAS/XMCD and HAXPES/MCDAD measurements with EELS (Electron energy loss spectroscopy) map of Co, Ni and O. Polarization vs. voltage hysteresis loop at RT and LT (left) and  MOKE (right) of Au/Co/Ni/HZO/W sample are also shown in figure.

Credit: Elettra

Unexpected rise in ferroelectricity as material thins

SCIENTIFIC ACHIEVEMENT

Researchers working at the Advanced Light Source (ALS) showed that hafnium oxide surprisingly exhibits enhanced ferroelectricity (reversible electric polarization) as it gets thinner.

SIGNIFICANCE AND IMPACT

The work shifts the focus of ferroelectric studies from more complex, problematic compounds to a simpler class of materials and opens the door to novel ultrasmall, energy-efficient electronics.

Ferroelectric lower limit?

Distortions in the atomic geometries of certain materials can lead to ferroelectricity—the presence of electric dipoles (charge separations) with switchable polarizations. The ability to control this polarization with an external voltage offers great promise for ultralow-power microprocessors and nonvolatile memory.

As electronic devices become smaller, however, the materials used to store and manipulate electronic data are being pushed to low-dimensional extremes. Properties that function reliably in bulk materials often diminish in ultrathin films just a few atomic units thick. Therefore, exploring the critical thickness limit in “polar” materials (i.e., materials having spontaneous electric polarization) is not only a fundamental issue for nanoscale ferroelectric research, it also has extensive implications for the future of high-density ferroelectric-based electronics.

Read more on Advanced Light Source (ALS) website

Image : A thin layer of hafnium oxide (two unit-cell thicknesses, or about 1 nm) has an electric polarization that’s reversible by an external electric field, making it attractive for use in next-generation low-power microelectronics.

Credit: Ella Maru Studio